2.0 0.15 4 . 5 0. 1 5 3 . 5 0 . 2 2.3 0.15 1 . 25 0 . 2 0.203max 0.2 0.05 5 . 3 0.2 features m e c h an i c al d at a maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified b240 b250 b260 maximum recurrent peak reverse voltage v rrm 40 50 60 v ma x imu m rms v o lt a g e v rws 28 35 42 v maximum dc blocking voltage v dc 40 50 60 v maximum average forw ord rectif ied current at c t l ( s e e f i g . 1) ( n o t e 2) i ( av) a peak f orw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i f s m a maximum instantaneous f orw ard voltage at v 2 . 0 a ( n o t e . 1) v f v maximum dc reverse current @t a =25 o c at rated dc blockjing voltage(note1) @t a =100 o c operating junction and storagetemperature range t s t g o c storage temperature range t j o c 0 . 5 i r note: 1.pulse test:300 | s pulse width,1%duty cy cle b220 --- b260 2. p . c . b . m o u n t e d w i t h 0 . 55 " x 0 . 55 " ( 1 4 . 0 x 14 . 0 m m 2 ) c o p p er p a d a r e a s reverse voltage: 20 --- 60 v cu r r e n t : 2 . 0 a ? built-in strain relief ? c a s e : j e d e c d o - 214 a a , m o l ded p l a s t i c o v er 1 11 1 pa ss i v a t ed c hip ? low power loss,high effciency ? plastic package has underwriters laborator 111 flammability classification 94v-0 t y p i c al the r m al r e s i t an c e ( n o t e 2) o c / w B230 ? high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals b220 ? polarity: color band denotes cathode end ? w eigh t : 0 . 0 0 3 oun c e s , 0 . 093 g r am ma units 20 d o - 21 4 a a ( s m b ) ? low profile package ? for surface mounted applications 30 14 21 20 ? terminals:solder plated, solderable per mil-std-750, 1 11 1 m e t h od 2026 ? high current capability,low forward voltage drop 30 5 0 . 0 2 . 0 ? for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ? guardring for overvoltage protection - 5 5 - - - + 150 - 5 5 - - - + 150 - 5 5 - - - + 1 5 0 0 . 5 0 . 7 20 ? metal silicon junction, majority carrier conduction ? high surge capability dimensions in millimeters barrier rectifiers surface mount schottky 15.0 r | jl diode semiconductor korea www.diode.kr
0 0.01 0.1 1 10.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 30.0 1.6 t j =125 c t j =150 c t j =25 c puise width=300 s 1%duty cycle b220- - b240 b250 - -b260 o o o t j =125 c t j =25 c 0 0 t j =75 c 0 b220 - b240 b250 - b260 1 0.001 0.01 0.1 20 10 20 0 406080100 t j =25 c f=1.0mhz vsig=50mvp-p b220 - b240 b250 - b260 o 1000 10 100 100 0.1 1.0 10 0.1 0.1 1 100 100 1 0.01 10 10 average forward rectified current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes reverse voltage,volts pulse duration,sec fig.5-typi cal juncti on capaci tance fig. 6-- typi cal transi ent thermal i mpedance transient thermal impedance o c/w junction capacltance pf nu m be r o f c y c l e s a t 6 0 h z instantaneous forward voltage,volts percent of rated peak reverse voltage, ? ambient temperature ?? b220 --- b260 fi g. 3 -- typi cal forward characteri sti cs fig.4 -- typi cal reverse characteristi cs fig. 1 -- forward derating curve fig. 2-- peak forward surge current 0 1 1 0 1 0 0 t l =100 c 8.3ms single half sine-w ave (j e d e c m e th o d ) 25 50 o 0.5 1.0 50 70 0 1.5 2 . 0 60 80 90 100 110 120 130 resistive or inductive load 0.375"(9.5mm) lead length 140 www.diode.kr diode semiconductor korea
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